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White Paper
Implementing MLC NAND Flash
for Cost-Effective, High-Capacity
Memory
Written by: Raz Dan and Rochelle Singer
JANUARY 2003
91-SR-014-02-8L, REV 1.0
Seitenansicht 0
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Inhaltsverzeichnis

Seite 1 - Implementing MLC NAND Flash

White Paper Implementing MLC NAND Flash for Cost-Effective, High-Capacity Memory Written by: Raz Dan and Rochelle Singer JANUARY 2003 91-SR-014-02-

Seite 2 - Introduction

Implementing MLC NAND Flash for Cost-Effective, High-Capacity Memory 91-SR-014-02-8L 10 Enhanced EDC and ECC The Error Detection Code (EDC) and Err

Seite 3 - Basic Flash Technology

Implementing MLC NAND Flash for Cost-Effective, High-Capacity Memory 91-SR-014-02-8L 11 Efficient Bad Block Handling x2 technology handles bad bloc

Seite 4 - Binary and MLC Technologies

Implementing MLC NAND Flash for Cost-Effective, High-Capacity Memory 91-SR-014-02-8L 12 MultiBurst To improve MLC read performance rates, x2 techno

Seite 5 - MLC Benefits and Limitations

Implementing MLC NAND Flash for Cost-Effective, High-Capacity Memory 91-SR-014-02-8L 13 Parallel Multiplane Access As discussed earlier, the MLC f

Seite 6 - Performance

Implementing MLC NAND Flash for Cost-Effective, High-Capacity Memory 91-SR-014-02-8L 14 How to Contact Us Website: http://www.m-sys.com General In

Seite 7 - Flash Management

Implementing MLC NAND Flash for Cost-Effective, High-Capacity Memory 91-SR-014-02-8L 2 Introduction Multi-Level Cell (MLC) technology greatly reduc

Seite 8 - Overcoming MLC Limitations

Implementing MLC NAND Flash for Cost-Effective, High-Capacity Memory 91-SR-014-02-8L 3 of NOR flash and achieving barely adequate reliability, but

Seite 9 - Robust Flash Management

Implementing MLC NAND Flash for Cost-Effective, High-Capacity Memory 91-SR-014-02-8L 4 e-OxideFloatingGateSelect GateSource DrainSubstrateProgram(I

Seite 10 - Enhanced EDC and ECC

Implementing MLC NAND Flash for Cost-Effective, High-Capacity Memory 91-SR-014-02-8L 5 MLC Benefits and Limitations MLC high-density design innovat

Seite 11 - Efficient Bad Block Handling

Implementing MLC NAND Flash for Cost-Effective, High-Capacity Memory 91-SR-014-02-8L 6 Read Disturb Errors The read disturb effect causes a page re

Seite 12 - DMA Support

Implementing MLC NAND Flash for Cost-Effective, High-Capacity Memory 91-SR-014-02-8L 7 Sustained Read When comparing sustained read performance val

Seite 13 - Summary

Implementing MLC NAND Flash for Cost-Effective, High-Capacity Memory 91-SR-014-02-8L 8 Overcoming MLC Limitations Because MLC technology can poten

Seite 14 - How to Contact Us

Implementing MLC NAND Flash for Cost-Effective, High-Capacity Memory 91-SR-014-02-8L 9 Table 1 maps the various features of x2 technology against t

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